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DTSTART;TZID="Pacific Time (US & Canada)":20190228T161000
DTEND;TZID="Pacific Time (US & Canada)":20190228T170000
SUMMARY:Colloquium: Physics & Astronomy – Dr. Feng Zhao
LOCATION:Webster Physical Science Building, Pullman, WA 99163
DESCRIPTION:The Department of Physics and Astronomy invites all to a colloquium featuring Dr. Feng Zhao, Associate Professor of Electrical Engineering at Washington State University, Vancouver. Dr. Feng Zhao will present their talk, “Wide bandgap semiconductors based power electronic devices and MEMS/NEMS.”,\n\nMeet for refreshments before the lecture at 3:45 – 4:10 p.m. in the foyer on floor G above the lecture hall.\n\nThere are applications that demand electronic devices and micro/nanoelectromechanical systems (MEMS/NEMS) to operate reliably in high power and harsh environments such as high temperature, high pressure, radiation, chemical, corrosion, biomedical, etc. Among different materials, silicon carbide (SiC) has been identified as a desirable material of choice due to its superior material properties including large bandgap energy, electrical stability, biocompatibility, excellent resistance to mechanical wear and almost all chemicals, and inertness to corrosion and radiation. This talk reviews our progress in SiC power electronic devices and MEMS/NEMS, and research interest in an emerging ultra-wide bandgap semiconductor, gallium oxide (Ga2O3)
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